tra nsient voltage suppressors for esd protection revision december 18 , 2013 1 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - n c un semiconductor co., ltd. www. unsemi .com .tw 0201/ d fn 0603 the esd 05v02 d - n c is ultra low capacitance tvs arrays designed to protect high speed data interfaces. this series has been specifically designed to protect sensitive components which are connected to high - speed data and transmission line s from over - voltage caused by esd (electrostatic discharge), cde (cable discharge events), and eft (electrical fast transients). ? 3 0 watts peak pulse power per line (t p=8/20s) ? surface mount package ? low clamping voltage ? working voltages : 5v ? low leakage ? iec61000 - 4 - 2 ( esd) level 4 esd protection ? ultra small smd package:0201 ? cell phone handsets and accessories ? microprocessor based equipment ? personal di gital assistants (pdas) ? notebooks, desktops, and servers ? portable instrumentation ? peripherals ? pagers ? case:0201/ dfn 0603 package molded plastic. ? terminals: gold plated, solderable per mil - std - 750, m ethod 2026. ? polarity: color band denotes cathode end. ? mounting position: any ? reel size : 7 inc h symbol parameter value units p p p peak pulse power (tp=8/20s waveform) 3 0 w i p p peak pulse current (tp=8/20s waveform) 2 .0 a t j operating junction temperature range - 55 to +125 oc t stg storage temperature range - 55 to +150 oc t l soldering temperature, t max = 10s 260 oc iec61000 - 4 - 2 (esd) air discharge 1 6 kv contact discharge 8 mechanical characteristics d escription feature functional diagram applications mechanical data
tra nsient voltage suppressors for esd protection revision december 18 , 2013 2 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - n c un semiconductor co., ltd. www. unsemi .com .tw characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm - - -- -- 5 v reverse breakdown voltage v br i t=1ma 5 . 5 -- - - v reverse leakag e current i r v rwm =5v -- -- 1 00 n a positive clamping voltage v c1 i pp =1a p =8/20 -- - - 1 2 v capacitance between i/o and gnd c j2 v r =0v -- 6 - - pf electrica l characteristics ( @ 25 unless otherwise specified ) characteristic curves 60ns 10% percent of peak pulse current % 30ns tr = 0.7~1ns time (ns) 90% 100% fig1. 8/20 s pulse waveform fig2 . esd p ulse w aveform ( according to iec 61000 - 4 - 2 ) fig3. power derating curve
tra nsient voltage suppressors for esd protection revision december 18 , 2013 3 / 3 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www. unsemi .com .tw for current information. esd 05v02 d - n c un semiconductor co., ltd. www. unsemi .com .tw fig4. clamping voltage vs. peak pulse current fig 5 . capacitance between terminals characteristics soldering footprint symbol inches millimeters a 0.012 0.31 b 0.008 0.20 c 0.014 0.35 d 0.006 0.15 e 0.016 0.40 f 0.026 0.66 characteristic curves 0201/ d fn 0603 package outline & dimensions
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